Photoelectric Response from D–π–A Dye's Langmuir-Blodgett Monolayer Film Modified Indium-Tin Oxide Electrode

Cheng-Shan Niu Beijing National Laboratory for Molecular Sciences (BNLMS), Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China; Graduate School of Chinese Academy of Sciences, Beijing, P. R. China

Shao-Lu Li Beijing National Laboratory for Molecular Sciences (BNLMS), Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China; Graduate School of Chinese Academy of Sciences, Beijing, P. R. China

Peng Gao Beijing National Laboratory for Molecular Sciences (BNLMS), Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China; Graduate School of Chinese Academy of Sciences, Beijing, P. R. China

Gang Li Beijing National Laboratory for Molecular Sciences (BNLMS), Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China

Lian-Ming Yang Beijing National Laboratory for Molecular Sciences (BNLMS), Laboratory of New Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. ChinaCorrespondence[email protected]

Abstract

Langmui-Blodgett (LB) monolayer films of two new amphiphilic D–π–A dyes were fabricated on both pure and acidic water subphases and transferred onto the ITO electrode by the LB) technique. The ultraviolet-visible absorption spectra and photocurrent properties of the ordered LB films were investigated.

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Photoelectric Response from D–π–A Dye's Langmuir-Blodgett Monolayer Film Modified Indium-Tin Oxide Electrode

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Photoelectric Response from D–π–A Dye's Langmuir-Blodgett Monolayer Film Modified Indium-Tin Oxide Electrode

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