Percolation process in high‐conductivity phosphorus‐doped amorphous Si:H:F alloys

Abstract

The dark conductivity of phosphorus‐doped amorphous‐silicon alloys (a‐Si:H:F) prepared by the RF plasma decomposition of a gaseous mixture of SiF₄, H₂ and diluted PH₃ is extremely high; it exceeds 10 (O‐cm)^‐1 with only a small amount of PH₃ (∼500 ppm) added in the gas phase. These doping characteristics represent a significant improvement over the doping characteristics of a‐Si:H alloys prepared by a glow‐discharge of SiH₄. The improvement was found to be due to the fact that P‐doped a‐Si:H:F contains microcrystallites which are embedded in an amorphous network. The percolation process in these two‐phase systems gives rise to high conductivity. We have used transmission electron microscopy (TEM) and diffraction (TED) to determine the critical surface fraction, ρ_c, of crystallinity at the onset of extended conduction. The measured ρ_c is approximately 0.46. This percolation limit provides a basis for the analysis of the electrical properties of P‐doped a‐Si:H:F.