Fabrication and characterization of PZT thin film ultrasonic devices

Abstract

The purpose of this study was to fabricate and analyze high sensitivity PZT thin film ultrasonic sensors. In this experiment, PZT material, silicon substrates and the RF planar magnetron sputtering system were adopted to deposit PZT thin films onto silicon diaphragms for ultrasonic sensors. Experimentally, the sensitivity of the devices was measured for frequencies ranging from 100KHz to 4MHz, where the maximum transmission and reception sensitivities were 74 μBar/ dBV and ‐68dBV/ μBar at 4 MHz. The sensitivity increased at higher frequencies, indicating that the PZT thin film ultrasonic devices are suitable for application as ultrasonic wave sensors at high operating frequencies. The experiment also demonstrated that the fabricated ultrasonic devices with poled PZT thin film have better transmission and reception responses than devices with unpoled PZT thin film.

Keyword :

• PZT thin film
• ultrasonic Devices

Notes

Correspondence addressee