![Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days]({"type":"image" , "src" : "/sda/5933/TOC-Subject-Sample-2021-Engineering-Tech.jpg"})
Additional information
Notes on contributors
Vikram Kumar
Vikram Kumar was born on July 8, 1947. He received the PhD degree in electrical engineering from Lehigh University, USA, after completing his post graduation in physics from Allahabad University, India in 1967. He had been serving at the Indian Institute of Science, Bangalore since 1977, prior to joining his current assignment at Solidstate Physics Laboratory in 1992.
He has published more than 100 papers in research journals. He is a recipient of MRSI medal for outstanding contribution in the area of semiconductor materials and their characterization and the Shanti Swarup Bhatnagar award (1992) for physical sciences.
He is an honorary editor for the Journal of the IETE and is on the editorial boards for Bulletin of Materials Science and IETE Technical Review. He is a member of several professional societies, including the Indian Physics Association (IPA), Indian Society for Technical Education (ISTE). Semiconductor Society of India (SCI), Materials Society of India (MRSI) and Institution of Electronics and Telecommunication Engineers (IETE).
Ishwar Chandra
Ishwar Chandra (d-o-b-6th Sept. 1936) completed his MSc (Physics) in 1957 from Agra University. He worked at National Physical Laboratory for 6 years and then joined Solid State Physics Lab, Delhi. He has worked at SSPL for more than thirty years in various capacities and finally retired as Scientist ‘G’ in Sept. 1996. He has won several awards for import substitution and technology development. His main area of work has been in the gallium arsenide material and device development for defence applications. Some of the successfully developed devices under his leadership namely 94 GHz Gunn diodes and Schottky Barrier diodes are presently being used in missile guidance systems of DRDO. He has been actively involved in the development of gallium arsenide MMIC technology upto 12 GHz. Circuits fabricated based on this technology have shown encouraging performance. The technology is presently under transfer to GAETEC, Hyderabad foundry for production. He has to his credit more than 50 publications in national and international journals. He is life member of Material Research Society of India and Semiconductor Society of India.