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Original Articles

Thermal Modelling of Packaged Silicon Millimeterwave IMPATT Diode—CW Case

, MIETE
Pages 451-458 | Published online: 26 Mar 2015
 

Abstract

Temperature distribution in millimeterwave IMPATT diode structure and the conventional package assembly comprising of gold and diamond heatsinks, is computed numerically in quasi-three dimensions, for CW mode of operation. Steady state heat flow equation is descretised using finite difference code and the resulting equations are solved by Successive Over Relaxation (SCR) technique with optimised parameters. Effect of intermediate layer of gold, commonly used in the packaging of these diodes, is studied for optimal thermal resistance of the packaged diode.

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