![Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days]({"type":"image" , "src" : "/sda/5933/TOC-Subject-Sample-2021-Engineering-Tech.jpg"})
Abstract
Basic operating principles of silicon and GaAs MESFET's are described. Differences arising out due to their different velocity field dependence are outlined. Transient effects in short gate length devices are discussed. Analytical solution for the I-V characteristics based on gradual channel approximation and the effect of saturated drift velocity are discussed. Small signal equivalent circuit of a short gate length FET and the design parameters of a low noise device are described. Fabrication technology for a practical small signal FET is presented.