Summary of Advances in High Frequency Transistors, Optoelectronic Devices and CMOS Circuits Fabricated using GeSi Strained Layers

Abstract

Extensive work has been done on the mechanical and electronic properties of GeSi strained layers during the last few years. This work has led to the fabrication of GeSi/Si heterostructures with improved mobilities and optical properties. Heterostructure bipolar transistors now operate at f_max= 120 GHz and high performance IR optical detectors cover most of the range from 1.4 to 20 μm. Quantum wires and quantum dots have been fabricated and their optical properties have been studied. Performance of devices has improved significantly during the last 4 years. A brief review of the recent work on the properties GeSi strained layers and the devices based on the layers is given in this paper.