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Abstract
A low phase noise Dielectric Resonator Oscillator (DRO) incorporating GaAs Gunn diode using microstrip configuration has been designed and developed at 28.75 GHz. The power output of = 21 dBm and a frequency tuning of ± 20 MHz has been obtained at 28.75 GHz with frequency drift of ± 20 MHz over temperature range form -10°C to +55°C. The phase noise of DRO has been improved when compared to free running Gunn oscillator and is better than -100 dBc/Hz at 100 kHz away from carrier.
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Notes on contributors
S S Sarin
S S Sarin, Born on 20th July 1947. obtained MSc (Physics), specialisation in electronics degree in 1969 from the Meerut University. Joined Defence Electronics Application Laboratory at Dehradun in May 1970 and since then has been working various capacities there. At present, working in the area of Millimeter wave sources using Gunn diodes Designed and developed Gunn Sources al Ka. V and W band frequencies for various millimeter wave communication systems. Authored/co-authored and presented about 20 technical papers in National/International Journals/conference Proceedings symposia.