Computer Aided Simulation Tools for the Analysis of Semiconductor Lasers

Abstract

The computer aided simulation tools have been developed for the analysis and optimisation of various physical parameters of the semiconductor lasers. For computer analysis, Poisson's equation and current continuity equations have been numerically solved iteratively to obtain electrostatic potential and quasi-Fermi potentials at various positions in the device structure respectively. The wave equation has been solved to obtain the optical field for the transverse electric mode and the rate equation for photons has been solved to obtain photon density. The operational mechanism of the device is fully understood using this tool by graphical representation of output characteristics. The current flow in the device is restricted to less distribution width due to self focusing effect for greater magnitude of current or operating voltage. The peak value of optical intensity value for 807 nanometer exactly lies at the centre of the active region, which confirms the optical confinement.

Additional information

Notes on contributors

Dnyaneshwar S Patil

Dnynaneshwar S Patil completed graduation in Physics from the Poona University with the rank. He received MSc (Electronics-Science) and MCM degrees with first class and A+ grade respectively from the Poona University. He qualified the State Eligibility Test in Electronics in November 1995 and obtained PhD (Electronics) from the North Maharashtra University, Jalgaon, Maharashtra State. He secured the high school scholarship and national merit scholarship in 1976 and 1985 respectively.

He joined the Department of Electronics, North Maharashtra University, Jalgaon and is now working as a Reader in Electronics. He has published about 17 research papers in international and national journals or high repute. His topics of interest include Computer Simulation of Semiconductor and Optoelecronics devices, Blue Laser diode, Analysis and optimization of device structures, Fabrication Techniques and advanced microprocessor applications.

D K Gautam

D K Gautam completed his PhD in 1988 with Dr W S Khokle at CEERI, Pilani. in 1989, he joined postdoctoral research under MONBUSHO fellowship with Prof Kunio Tada at the University of Tokyo, Japan, where he developed die technology for double heterostructure bipolar transistor optical switch. In 1991, he joined Central Research Laboratory, Hitachi Limited, (Tokyo) where he proposed, designed and fabricated the first high speed optical switch in MESFET geometry which is a patented product of Hitachi in the credit of Dr Gautam's research. In 1994, Dr. Gautam joined North Maharashtra University, Jalgaon as a Reader in Electronics, where he is presently working as Professor and Head of Electronics Department. He initiated the research activities at North Maharashtra University in design and fabrication of optoelectronics devices. He has developed his laboratory with indigenously built up sophisticated equipments like diffusion system, CVD, LPE, TEOS-CVD, MOCVD, PECVD, Gas phase etching system, Lithography facilities in a specially designed and built up low cost and low maintenance clean room.

Presently, he is having a mega project from DST to develop the WDM devices and other projects from AICTE and CSIR. Prof Gautam's research interest is Computer aided design techniques, instrumentation and fabrication of optoelectronics devices. His team has developed software design tools like semiconductor Lasers, BPM to design guided wave devices required for photonics integration and many more software are in process of development. This makes his laboratory India's first indigenously built up laboratory for complete technology required for optoelectronics technology. Prof Gautam is the member of IEE, IEEE, Japan Society of Applied Physics etc.