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Abstract
The dynamic and noise characteristics of Si/Si1-xGex Double Drift Region (DDR) heterostructure IMPATTs/MITATTs are reported at D-band for different mole fraction (x) of Ge in Si1-xGex for different heterostructure layer widths (WH) in each side of the junction. The optimized values of x (=xopt) and corresponding WH (=WHopt) are suggested to obtain optimized dynamic and noise characteristics. It is shown that Si/Si1-x, Ge-based heterostructure IMPATTs delivers optimized device characteristics at xopt = 0.45 and WHopt = 40nm.
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Notes on contributors
S K Panigrahi
S K Panigrahi obtained his BE degree from National Institute of Science and Technology, Berhampur, He joined as a Software Engineer at NIST in 2001. He is now working at Satyam Computer Services India as a Software Engineer. His research interest includes Modeling and Simulation of Semiconductor Devices.
A K Panda
A K Panda obtained his PhD degree from Sambalpur University in 1996 and joined as a Faculty at National Institute of Science and Technology where he is working till date as an Assistant Professor. He was a BOYSCAST Fellow of DST, India to University of Michigan, USA in the year 1999–2000. He is a Regular Associate of ICTP, Trieste, Life Member of IETE, ISTE, and Member of VLSI Society of India and IEEE. His research interest includes modeling of Homo/Heterostructure Semiconductor Devices and VLSI Design.