Tailoring and patterning of dielectric interfaces for the development of advanced organic field-effect transistors

Abstract

The progress of organic field-effect transistors (OFETs) has led to the advent of a new area of printed and/or flexible electronics. In organic transistors and circuits, the interface between a gate insulator (GI) and an organic semiconductor (OS) plays a critical role on the electrical performance together with the functionality, the reliability and the long-term stability. In this review, we describe the basic principles of engineering a variety of the GI/OS interfaces for the development of advanced OFETs from the framework of the surface morphology and the physico-chemical surface interactions. We also discuss the dielectric interface modification and the resultant device performance of the OFETs.

Keywords:

• organic field-effect transistor
• gate insulator interface
• patterned dielectric
• nonvolatile memory

Acknowledgement

This work was supported by the National Research Foundation of Korea under the Ministry of Education, Science and Technology of Korea through the Grant No. 2011–0028422.