Abstract
The present paper together with a subsequent paper discusses the design of I.F. amplifier and detector stages with stabilized bandpass characteristic suited for use in the community receiver. In the present paper a method of partial neutralization is described and it is shown that with surface barrier transistor it is possible to design a double tuned I.F. amplifier stage whose performance is close to that predicted from measurements carried out to determine transistor parameters at a single value of emitter current. This is particularly true as regards the variation in the gain and bandpass characteristics of a common emitter connected I.F. Amplifier stage.