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Original Articles

Control Characteristics of 4-Layer Silicon Controlled Rectifier (SCR)

Pages 36-41 | Received 23 Dec 1961, Published online: 21 Aug 2015
 

Abstract

The properties and operation methods of 4-layer silicon controlled rectifier, designated as SCR in the following, have been described. A simplified theory of its triggering action has been given and the properties compared to those of the thyratron. Experimental results of the control characteristics have been presented.

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