![Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days]({"type":"image" , "src" : "/sda/5933/TOC-Subject-Sample-2021-Engineering-Tech.jpg"})
ABSTRACT
Fabrication of a commercial type of fused silicon diode from an n-type material of resistivity 10 ohm cm. is described. The design is such that it will give about 150 mA. at 1 volt and will have a high breakdown voltage and high rectification ratio. For P-type doping of n-type silicon, results of several alloys are discussed. The complete details of fabricating the diode, i.e. slicing, etching, alloying and of testing the diode characteristics are presented.