On Surface Leakage and Breakdown in P-N Junctions

ABSTRACT

In alloy p-n junction diodes the surface leakage current through the inversion layer is dependant on the size of the semiconductor wafer and on the alloyed pellet diameter. It is shown that for small wafer size to pellet size ratio the leakage current increases and the surface breakdown voltage decreases. Defects and dislocations on the surface constitute high conductivity regions which concentrate the electric field lines and reduce the device breakdown voltage.