ABSTRACT
Hall effect and electrical resistivities of solid solutions of the semiconducting compounds Cd3As2 and Zn3As2 have been studied, both at room temperature and at liquid nitrogen temperature. The system is interesting because Cd3AS2 is n-type while Zn3As2 is p-type, giving rise to the possibility of ‘compensation’ in the solid solution. The range of solid solution extends from 0 percent Cd3As2 to 100 per cent Cd3As2.
The carrier density and mobilities have been evaluated both at 300° and 78°K.
The samples were prepared by direct fusion of the elements. Some problems encountered in the preparation of the materials are discussed.