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ABSTRACT
The paper deals with a new method of determining some of the physical parameters of alloy junction transistors. From a measurement of the variation of common emitter input impedance and the current amplification factor, with emitter current, a method of calculating base spreading resistance and the junction temperature is given. Using in addition the measured values of the base-emitter voltages at different emitter currents, a method of calculating the carrier densities in the base region, emitter efficiency and recombination term is also given. A simple experimental set up used for these measurements is described. The method is applicable only to uniform base germanium transistors.