Evaluation of Device Geometry and Performance Characteristics of Semiconductor Devices from Charge Control Parameters

ABSTRACT

The charge control model of diodes and transistors which is most fundamental and simple in its description of the physical mechanism of the device has been employed in the recent past to predict the large signal switching characteristics of the device.

This paper attempts to extend the utility of the charge-control model in the evaluation of the small signal parameters of the device, which include the h-parameters and the cut-off frequencies. The charge control parameters have also been used to deduce the base-width, junction area and effective minority carrier life-time in the base region of the device.