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ABSTRACT
Diffusion of zinc in n-type InAs was investigated in the temperature range 600–900°C. The diffusion coefficient at a given temperature was determined by p-n junction method using the two specimen formula.
The temperature dependence of the diffusion coefficient in this range of temperature is described by the expression
where 0·93 eV. is the activation energy of diffusion.
Experiments using radioactive Zn65 indicated that diffusion profiles of Zn in InAs are anomalous most probably due to the interaction between slow substitutional and fast interstitial diffusion.