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ABSTRACT
This paper describes the simulation of a graded base transistor by an Active Transmission Line consisting of resistance, capacitance and trans-conductance. Exponential and complementary error function grading of the base impurities have been simulated on the analog in order to study the difference in the performance characteristics of the device for the two types of grading. The Alpha cut-off frequency, current gain and excess minority carrier distribution profiles in the base region, have been measured on the analog for the two types of grading and the experimental results are presented in the paper.