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ABSTRACT
Germanium PNPN switches having forward breakover voltages in ths range of 30–60 volts and hold currents of the order of a few milliamperes have been fabricated on 2 ohm cm. p-type germanium by alloy diffusion and alloying. The paper reports the fabrication procedure including a technique of stabilizing the terminal characteristics of the devices to provide long term stability. The static characteristics of the switches are given to bring out the versatility of the devices. Two types of switches—those having an off state with the gate open (termed diode switches in the paper) and those having no off state with the gate open (termed triode switches) are dealt with and their mechanism of operation explained in the paper.