Photodielectric Effect in n-Type Silicon

Abstract

In this work the photodielectric effect in antimony doped silicon has been studied by measuring the real and imaginary parts of the dielectric constant of the sample in the frequency range from 0·5 to 30 MHz and for a wide range of incident radiation using Schering Bridge and calibrated attenuators. The results have been interpreted in terms of Maxwell-Wagner Effect in hetrogeneous dielectric having regions with different conductivity, dielectric constant or both.