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Abstract
The paper describes an instrument developed for the study of secondary breakdown (SB) characteristics of semiconductor devices. The characteristic parameters of SB phenomenon can be obtained with the help of this instrument along with a CRO. The Voltage and current levels associated with the SB phenomenon are obtained through the V-I characteristic of the device under breakdown and the delay characteristics are obtained from the voltage waveform. This instrument can be used to study the SB characteristics of diodes and transistors with reverse base drive.