Analogue Computer Simulation of Transistor Switching Circuits

Abstract

In this study the analogue computer is used to simulate the behaviour of a drift transistor used in a simple switching circuit. A model is assumed for the transistor and the model parameters are estimated by terminal measurements on the actual device. The turn-on transient behaviour has been studied on the analogue computer. The experimental values of rise time are in close agreement with those obtained using the analogue method.

A simulation scheme which takes care of the non-uniform injection in the transistor base region has also been attempted. It is hoped that this simulation scheme will lead to a better understanding of the device behaviour under high current operation. An approach for simulation of stored charge in the extrinsic region of the base is also discussed.