Temperature Effects on Avalanche Characteristics of Junction Transistors

Abstract

For the analysis and design of circuits employing transistors operating in the avalanche region, the knowledge of the temperature variations in the avalanche region characteristics of transistors is very essential for reliable circuit operation. An experimental study to observe the effect of temperature on the avalanche characteristics of junction transistors is carried out. As temperature is varied, it is observed that the output avalanche characteristics change drastically. The breakdown voltage decreases and finally the negative resistance region disappears in most of the cases. The avalanche characteristics for both germanium and silicon transistors are experimentally obtained. An explanation for the observed behaviour is also given.