Abstract
The hybrid parameters of the compound units utilizing two transistors, three transistors and four transistors have been determined experimentally at different temperatures and for various values of emitter currents and compared with that of the single transistor with the aim of studying the circuit behaviour of these compound units. The compound transistors offer high input impedence but this advantage is achieved at the cost of the deterioration of the circuit properties. The voltage gain of the compound transistor arrangement becomes relatively more dependent on the transistor temperature and the emitter current.