Thermal Variation of Emitter Base Voltage of Composite Transistor

Abstract

Thermal variation of emitter base voltage of composite transistor has been computed for a wide dynamic range. At the outset a postulate is given in terms of its essential temperature dependent linear and non-linear properties. The conjoint occurrence of fundamental equation is derived. Numerical results which are relevant for the interpretation of existence of symmetries in change of emitter base voltage and effect of high emitter series resistance of inverse transistor, are briefly discussed.