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Original Articles

CdS Thin-Film Field Effect Transistor

, & (Assoc. Member)
Pages 739-741 | Received 18 Feb 1974, Published online: 11 Jul 2015
 

Abstract

In this paper, Thin-Film Field Effect Transistor (TFT) made in our laboratory using vacuum evaporation and photolithography is reported. The different parameters are calculated. When two gates cover the same source and drain electrodes, the device with the gate near the connecting pads shows saturated characteristics, but the other device fails to saturate. A simple explanation based on surface states is given for this behaviour.

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