Thin-Film Field-Effect Transistor

Abstract

Coplanar electrode thin-film transistor, fabricated by vacuum evaporation of aluminium and cadmium selenide is described. The drain characteristics of one of the fabricated samples are presented. The transconductance and gain-bandwidth product of the device are approximately 27 micromhos and 3 kHz respectively. The drain characteristics are observed to be sensitive to the incident light. The hysteresis loops observed in the characteristics can be due to positive alkali-ion drifts and traps in the insulator and insulator-semiconductor interface.

Indexing Terms:

• Thin-Film Transistor
• Field-Effect Transistor