Photo-voltaic Properties of Metal-Oxide-CdS Solar Cells

Abstract

MIS solar cells based on metal-oxide-CdS structure have been fabricated and their photovoltaic properties have been evaluated. For a typical cell, maximum open-circuit voltage and short- circuit current have been obtained as 0.55 V and - 1 mA/cm2 at an illumination intensity of 120 mW/cm2. Dark current in the cells has been found to be mainly dominated by tunnelling via interface states. A high density of states seems to exist in the interface between oxide and CdS which is estimated as ∼ 10¹² cm⁻² eV⁻¹.

Indexing Terms:

• Solar Cells
• Photo-voltaic Properties
• MIS Structures

Additional information

Notes on contributors

Krishna P. Pande

PANDE, KRISHNA P (Dr): Was educated at the University of Lucknow where he obtained the degrees of BSc (1967) and MSc (1969). He received his PhD from Indian Institute of Technology, Madras in 1973. Dr. Pande was employed at the National Physical Laboratory in New Delhi during 1973–75 and has subsequently held senior research positions at the New University of Ulster and the University of Durham. Currently, he is working at Rensselaer Polytechnic Institute and is associated with the development of low-cost solar cells. He has published over twenty papers in the areas of semiconductor devices and behaviour of ionic insulators.

Balbir Singh

SINGH, BALBIR: Was educated in Punjab University, where he obtained his Pre-Engg. (1963). Passed AMIE (ME in May 1966 & EE in Nov. 1968). Since 1965, has been employed at NPL, N. Delhi, where he currently holds a post of a Scientist. During his association with NPL, he has worked in the area of crystal growth of silicon, III-V & II-VI compounds and their devices e.g. electroluminis-cent panels, X-ray image intensifier & photoconductive cells. Presently, engaged in the design & fabrication of tools for ferrite components and of silicon solar cell panel.