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Abstract
The figure-of-merit (M) of a semicondnctor-coupled SAW convolver can be improved considerably by influencing the surface of the adjacent semiconductor wafer (p-type silicon) through MOS effect by a positive bias (V) applied between a metal multistrip electrode deposited on the interaction region of the piezo-electric substrate (LiNbO2) and silicon wafer. M vs K curve shows two prominent peaks at bias levels corresponding to certain depletion and inversion conditions of the semiconductor surface.
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Notes on contributors
Sk. Lahiri
Lahiri S K (Dr): Born in October 22, 1943. Received MTech in Radio Physics and Electronics in 1966 and PhD (Science) in 1971 both from University of Calcutta. Joined Department of Electronics and Electrical Communication Engineering, IIT, Kharagpur in November 1971 and he is now Assistant Professor in the same department. Area of research activities are acoustoelectric instability in Piezoelectric materials, SAW devices and semiconductor electronics and integrated circuit technology. He is a member of the Institution of Electrical & Electronic Engineers, U.S.A.
A.K. Chaki
Chaki A K: Born in December 27, 1948. Obtained BSc (Hons) Physics from Calcutta University and MSc from Sambalpur Univerversity in 1972. After that joined in West Bengal Educational Service as a lecturer in Physics.
At present connected with IIT, Kharagpur, in the department of Electronics & Electrical Communication Engineering for carrying out research for the PhD degree in the field of surface Acoustic wave Device.