Some Features of Avalanche Breakdown Phenomena Part 1: Transistors and Diodes

Abstract

The temperature variations of the breakdown voltages of some commonly-used transistors and zener diodes, the negative-resistance characteristics of a transistor in the avalanche mode and their dependence on the base-circuit conditions, the temperature dependence of the Miller's index n and its role in the disappearance of the negative-differential resistance in the input characteristics of the transistor have been studied experimentally and explained theoretically. It is concluded that the nature of the reverse volt-ampere characteristics of a p-n junction depends upon the impurity concentrations on the two sides of the depletion layer. When the impurity concentrations are low, there is a negative differential resistance in the output characteristics of the transistor operating in the avalanche mode.

Indexing Terms:

• Avalanche Breakdown
• Negative Resistance