Some Features of Avalanche Breakdown Phenomena Part 2: Gate-Controlled Diodes

Abstract

The breakdown characteristics of the gate-controlled diodes have been studied at various gate voltages and different temperatures. The purpose of this study has been to find out the effect of surface conditions on the nature of the differential-resistance properties of the reverse characteristics of the gate-controlled diodes and the temperature co-efficient of the breakdown voltage. It is found that although the surface conditions affect the breakdown voltage appreciably, they do not alter the differential-resistance characteristics or the temperature co-efficient of the breakdown voltage. The turn-on voltage is found to depend on the magnitude of the reverse bias and the gate voltage. The turn-on voltage decreases with the increase of reverse voltage.

Indexing Terms:

• Avalanche Breakdown
• Gate-Controlled Diodes
• Negative Resistance

Additional information

Notes on contributors

M.A. Peer

Mushtaq Ahmad Peer (Dr): Born on 30 August 1951 at Chattabal, Srinagar, Kashmir, obtained M.Sc. Prev. in Mathematics in 1972, M.Sc. Physics with specialisation in Solid State Electronics (with distinction) in 1974 and Ph.D. in Solid State Electronics in 1978 from the University of Kashmir, Srinagar. Went to International Centre for Theoretical Physics, Trieste, Italy to participate in Fourth Course on Solar Energy Conversion—1977. Participated in several National and International Conferences and worked in Tata Institute of Fundamental Research (SSD group), Bombay and Central Electronics Engineering Research Institute (SSD group), Pilani. Was appointed Lecturer in the Department of Physics, University of Kashmir in 1978 and has been continuing in this capacity. Presently, heading a research group in Solid State Devices in the Department of Physics.