Metallization System for Shallow-Junction Silicon Photodiodes

Abstract

The purpose of this paper is to present a contact structure for shallow-junction silicon photodiodes. A three-layer metallization system consisting of Ti-Pd-Au was studied. The factors which are of prime importance for shallow junction silicon photodiodes are reverse-leakage currents and forward drop. The authors studied these factors for Ti-Pd-Au contacts and found the system most suitable for shallow-junction silicon photodiodes.

Indexing Terms:

• Metallization
• Shallow-Junction Si Photodiodes