Measurement of Lifetime of Charge Carriers in Semiconductors by the Electron-Beam Technique

Abstract

This paper describes the technique of measurement of lifetime of minority carriers in semiconductors by using a demountable electron gun.

Indexing Terms:

• Life Time
• Electron-Beam Technique

Additional information

Notes on contributors

K. Ramkumar

Ramkumar, K: Obtained his M. Tech degree from Indian Institute of Science in 1976 and Ph.D from the same institution in 1980 in the area of semiconductor devices. Presently he is working as a Research Associate in the Electrical Communication Engineering Department of Indian Institute of Science, in the area of electrical properties of polycrystalline semiconductors.

M. Satyam

Mandavilli Satyam: Received his B.E. in Telecommunication engineering from Madras University in 1958, M.E. and Ph.D. in Electronics and Telecommunication Engineering from Indian Institute of Science, Bangalore, in 1960 and 1963 respectively. He has been on the faculty of the Electrical Communication Engineering Department of the Indian Institute of Science for the last sixteen years and has been involved in teaching, research and development in the area of Electron Devices. He has, to his credit over 40 publications and 4 patents.

Presently, he is a Professor and is leading the activities of the Electron Devices Group of the Department.