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Abstract
A reflection technique has been developed for the measurement of the dynamic quality factor 
of varactor diodes. Several diodes with varying design parameters were fabricated at CEERI and their measured at 4-GHz. It has been observed that of the diodes improves with increasing cut-off frequency fc and decreasing series resistance Rs. These diodes were successfully used in a 4-GHz negative resistance parametric amplifier also developed at CEERI. It is shown that the maximum gain (G)max and the minimum noise figure (NF)min of the amplifier improve with increasing of the diode.