Effect of Trichloroethylene on Si-SiO₂ Interface States

Abstract

MOS test capacitors were fabricated by thermal growth of silicon dioxide on (111) n-type 250 ohm-cm silicon using dry 0₂, and dry 0₂ with trichloroethylene (TCE). A comparative study of these Si-Si0₂ interfaces was done using C-V measurement technique at different frequencies. A change in sign of interface charges from Q_ss = + 9.6 × 10-⁸ coul/cm² to–11.2 × 10-⁹ coul/cm² as well as a large decrease in density of interface states N^ss from 6 × 10¹¹/cm² to 7 × 10¹⁰/cm² have been observed.