Effect of Peripheral Injection on Bipolar Transistor Characteristics

Abstract

Minority carrier injection from the emitter periphery into the base of a double-diffused bioplar transistor is studied. The emitter periphery is assumed as a part of cylinder and this analysis which is based upon the Whittier-and- Tremere method, is incorporated with active region analysis to predict the over-all transistor characteristics.

The analysis leads to the prediction of peripheral properties and active region analysis separately and hence gives insight to both. The measured and computed results on microwave transistors are in fair agreement.

Indexing Terms:

• Peripheral Injection
• BJT