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Abstract
The effect of various parameters like order of vacuum, substrate temperature, etchants and presence of Iodine on the Au/Cr metallic system on silicon devices was studied and reported. It was observed that chromium deposition at 10-5 torr reacted with residual oxygen and formed chromium oxide. Au/Cr system deposited at 10-6 torr at substrate temperature of 200°C was found most suitable for device applications giving contact resistance of the order of 2.7 x 10-5 Ωcm2 on boron doped silicon 19Ωcm/2 sheet resistivity.