Note on the Temperature Dependence of the Interbase Resistance of a Unijunction Transistor

Abstract

The temperature dependence of the interbase resistance of heavily n-doped unijunction transistors (2N 2646) in the 150–410°K range is shown to obey an empirical relation of the form RT=RT_o exp [B(T—T_o], where, R_T and R_To are interbase resistance at T K and T₀°K respectively, and B is a constant of the UJT channel material.