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Abstract
A comparative study has been made on the properties of Ge-GaAs single velocity and double velocity hetero-junction (H.J.) Impatt diodes. It is observed that for high frequency operation double velocity H.J. Impatt will give more power than the single velocity H.J. Impatt and the homo junction Impatt (i.e. SDR Impatt).
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B.B. Pal
Khan, R U: (b. Nov. 1949, Varanasi). Received B E and M E degrees in Electronics Engg. from Banaras Hindu University in 1971 and 1974 respectively. Joined the Department of Electronics Engineering, IIT, BHU as a Senior Research Follow in 1975 and as a Lecturer in 1980. Doing research work towards PhD degree on Hetero-junction Impatt Devices. Is a co-investigator of the project entitled “Hetero-junction Impatts and other solid-state Transit-time Devices” sponsored by UGC. Has published a number of research papers on Heterojunction Impatt diode structures using different elemental, III-V and ternary semi-conductors.