Si-Sio₂ Interface State Measurements

Abstract

This paper presents the results of fast interface state measurements using Kuhn's quasi-static technique for MOS capacitors with gate SiO₂ grown thermally under dry ultra-high pure oxygen having moisture content of ∼ 4 ppm. This process, besides being simple to adopt in fabrication of practical devices, can reproducibly yield capacitors with fast interface states in the middle of the band gap ∼10¹⁰/cm₂eV, mobile ions ∼6 × 10¹⁰/cm² and inversion voltage of–2 to–4 volts.

Indexing Terms:

• Interface States
• Quasi-static Technique
• Inversion Valtage
• Bias Temperature Stress