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Abstract
It is well known in silicon process industry that the check-slice measurements made to monitor individual diffusion steps do not always agree with the actual diffused “esistors fabricated simultaneously. It has been found that the sheet resistance of boron diffused resistors is about 30% greater than the value obtained with the help of a 4-point probe on the check slice. The effect has been found to be due to the interference of the surrounding masking oxide with the diffusion of boron into the windows. The results of a careful investigation are reported. It is found that the effect does not depend upon the oxide growth conditions and is observed only in the case of boron diffusion using a vapour source. Possible causes of these effects have been discussed.