![Sample our Engineering & Technology journals, sign in here to start your access, latest two full volumes FREE to you for 14 days]({"type":"image" , "src" : "/sda/5933/TOC-Subject-Sample-2021-Engineering-Tech.jpg"})
Abstract
The narrow gap lead-tin-telluride (Pb1-x Snx Te) compound semiconductor has assumed an increasingly important role in the field of IR detectors. One of the techniques which has contributed significantly to the preparations of epitaxial films of IV-VI compound semiconductors with bulk-like properties is the Hot Wall Epitaxy Technique (HWE). This HWE technique has been employed for the growth of epitaxial films of Pb0.8Sn0.2 Te by us. Films have been grown on (100) KCI substrates at various temperatures ranging from 250°C to 350°C. The crystallinity and the surface qualities have been examined by X-ray techniques and Selected area Channelling patterns using Scanning Electron Microscope (SEM) Electrical characteristics such as resistivity and mobility are measured using Van der Pauw Technique. IR radiation response of these films is also investigated from room temperature to liquid nitrogen temperature.