Study of Pb_1-x Sn_xTe Epitaxial Films Deposited by MBE Technique

Abstract

Epitaxial films of Pb_1-x Sn_xTe (LTT) were deposited on (100) KCI substrates at 300, 325 and 350C using Molecular Beam Epitaxial (MBE) technique. RHEED, X-ray and Van der Pauw techniques were employed to study surface structure, single crystallinity and electrical properties of these films respectively. The resistivity of these films was found to decrease from 10⁻² Ω-cm at 300K to 10⁻³ Ω-cm at 100 K. The mobility was found to increase with lowering of temperature in the range 10² cm³/V sec at 300 K and 10³ cm²/Vsec at 100 K.