Ion Implantation in Microelectronics—III-V Compounds

Abstract

Ion implantation is not only most widely used as a process for selectively introducing controlled amount of n- and p-type impurities in III-V compounds, but has become one of the key processes in the fabrication of GaAs MESFETs and their large scale integration. Many problems encountered during implantation and post-implantation annealing especially in GaAs and InP and techniques used to minimize/overcome them are discussed in this review. Some ion implantation work carried out in our laboratory towards fabrication of GaAs devices and circuits are also mentioned in the text.

Indexing terms:

• Ion implantation
• III-V compounds
• Semiconductors microelectronics devices