Comparison of Defect Generation by irradiation and High Field Stressing in MOS Structures

Abstract

Comparative studies of defect generation in thin dry oxides by γ-rays and high electric fields have been made. Stress-anneal-stress cycles with intervening high frequency CVs and quasi-static measurements show that not only is there positive charge build-up due to radiation and field stressing but slow and fast interface states and possibly hole traps are also generated. A 250°C-15 minute anneal detraps the hole traps and anneals the interface states but not the hole traps whose generation is quite clear for field stressing though not for γ-ray stressing. While there are similarities especially in positive charge build-up after radiation or high field stressing, there also are differences especially in the properties of the interface states created.

Indexing terms:

• High field stressing
• MOS structures
• γ-ray irradiation