Design of GaAs Monolithic Microwave Low Noise Amplifier in L-Band and SPST Switch from DC to 2 GHz

Abstract

This paper deals with preliminary design of (i) a low noise amplifier with a noise figure of 2.5–3.0 dB and associated gain of 9-lldB over 1.2–1.8 GHz band (ii) an SPST switch with insertion loss < 2dB and isolation > 30dB from DC to 2GHz. The design details of both the active and the passive components are presented. The layouts of both the circuits are also considered.

Indexing terms:

• Low noise amplifier
• SPST switch
• Monolithic Microwave integrated circuits