MOS and Bipolar Memory Circuit Techniques

Abstract

Digital integrated circuits have seen phenomenal developments in terms of speed, density and functionally. These have been brought about by developments in VLSI technology, improvements in circuit techniques, novel system approaches and design methodology and the pressure of modern system requirements. In fact memories have been recognized to be technology drivers in enhancement of speed and density. Developments in integrated circuit logic and memory have been surveyed. Performance improvements in RISC and CISC have created a demand for ever improving performance. Systems with cycle times greater than 20 MHz have become common place and often require access times in the 20–40 ns range. The embedded control systems require significance non-volatile storage. Large memories with high speed are specially required to meet the demands of video signal processing, graphics and character recognition.

The present survey discusses some of the above developments in memory, in particular, circuit techniques involved in realising high performance obtainable.

Indexing terms:

• Digital integrated circuits
• VLSI technology
• MOS memories