Guest Editorial

"Guest Editorial." IETE Journal of Research, 37(2), pp. 169–170

Additional information

Notes on contributors

B B Paul

B B Pal received the BSc (Hons) degree in Physics in 1965 from Presidency College, Calcutta, India, and the BTech, M Tech, and PhD degrees in 1967, 1968 and 1975, respectively, from the Institute of Radio Physics and Electronics, Calcutta University.

He joined the Centre of Advanced Study in Radio Physics and Electronics as a Lecturer in 1971. He then joined the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi, India, as a Reader in 1979, where he became a Professor in 1986. From April 1988 to March 1990 he was the Head of the Department. He has made many original contributions. He has suggested a new computer simulation technique and large signal analytical model for a double-avalanche region (DAR) IM-PATT diode. He has significant contributions in the field of optical field-effect transistors. He also proposed a new avalanche photo-detector named the Photo-DOVATT. He formulated an empirical formula for the calculation of permittivity in quaternary semiconductors. He has more than 120 papers in journals and conference proceedings. His present areas of interest are III-V materials, high speed and optoelectronics devices, computer-aided devices and circuit simulation.

Dr Pal is a foundation life member of the Semiconductor Society (India) and was a member of its Executive Committee during 1985–1987. He was elected Vice President of the Society for two years beginning 1989.

He is a member of the editorial board of several scientific journals.

Krishna Shenai

Krishna Shenai was born in Katapady, India, in 1956. He received his BTech degree in electronics from the Indian Institute of Technology, Madras, India, in 1979, his MS degree in electrical engineering from the University of Maryland. College Park, MD in 1981, and his PhD degree in electrical engineering from Stanford University, Stanford, CA, in 1986. His doctoral dissertation included theoretical and experimental investigations related to growth and physics of GaAs Schottky barriers, holmic contacts, and MESFET's grown by in situ molecular beam epitaxy.

In 1986, Dr Shenai joined General Electric Corporate Research and Development Center, Schenectady, NY, and has been working on physics and technology of power semiconductor devices and integrated circuits, optoelectronic devices and integrated circuits, high density interconnects, and multichip packaging technologies. He had held staff positions at the University of Maryland, College Park, MD (1979–1981), COMSAT Laboratories, Clarksburg, MD (1981–1983), Hewlett-Packard Laboratories, Palo Alto, CA (Summer, 1983), and Stanford University, Stanford, CA (1983–1986). Dr Shenai has made sustained contributions to semiconductor surface and interface physics, GaAs MMIC and millimeter wave technologies for broadband satellite communication, refractory metal/silicide multilevel metallization technologies, high-frequency power electronics, and smart-power technologies. Most recently, his work has included fundamental studies of wide energy bandgap materials and optoelectronic devices. He is the holder of 4 patents with numerous other pending. His work has resulted in over 100 research publications in refereed international journals and conference records.

Dr Shenai is a member of Sigma Xi, the Electrochemical Society, the American Physical Society, the Material Research Society, the American Association for the Advancement of Science, and the New York Academy of Sciences. He has served on a number of IEEE conference committees including the Device Research Conference (DRC) and International Electron Device Meeting (IEDM). He is the organizer and Technical Program Chairman of the First SPIE/IEEE Conference on Emerging Optoelectronic Technologies to be held at the Indian Institute of Science, Bangalore, India in Dec 1991 In 1990. Dr Shenai organized and taught an extensive short course on Power Electronics: Components & Systems offered through the University of California. Berkeley, CA Extension. He has edited two conference records and is the editor of VLSI Metallization: Physics and Technologies (Artech House, 1990). Since 1990, Dr Shenai has been serving as the Associate Editor of IEEE Trans Electron Devices. He is a Senior Member of IEEE and serves as a member of the US National Science Foundation panel on solid-state and microstructure sciences. He is listed in Who's Who in Technology and Who's Who in Engineering and is the Vice-Chairman of the Schenectady, NY, Section of IEEE MTT Society.